Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 30 W
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/Continuous drain current (Ids): 22A
Technical parameters/rise time: 8 ns
Technical parameters/Input capacitance (Ciss): 2880pF @100V(Vds)
Technical parameters/rated power (Max): 30 W
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 30W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STF31N65M5
|
ST Microelectronics | 类似代替 | TO-220-3 |
650V,22A,N沟道MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review