Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 7A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB9NK60Z
|
ST Microelectronics | 功能相似 |
N沟道600V - 0.85ohm - 7A TO- 220 / FP / D2PAK / I2PAK齐纳保护SuperMESH⑩Power MOSFET N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review