Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 6.25 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 3 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/leakage source breakdown voltage: 40 V
Technical parameters/Continuous drain current (Ids): 15A
Technical parameters/rise time: 42 ns
Technical parameters/Input capacitance (Ciss): 1570pF @25V(Vds)
Technical parameters/descent time: 5.2 ns
Technical parameters/dissipated power (Max): 3W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STL60N32N3LL
|
ST Microelectronics | 功能相似 | PowerVDFN-8 |
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STL80N3LLH6
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ST Microelectronics | 功能相似 | PowerVDFN-8 |
N沟道 30 V 5.2 mOhm STripFET™ VI DeepGATE™ 功率 Mosfet
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