Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 10 @500mA, 5V
Technical parameters/rated power (Max): 30 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/packaging: TO-126-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BULT118
|
ST Microelectronics | 类似代替 | TO-126-3 |
高压快速开关NPN功率晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
|
||
STT13005
|
ST Microelectronics | 类似代替 | TO-126-3 |
高压快速开关NPN功率晶体管 High voltage fast-switching NPN power transistor
|
||
STT13005D-K
|
ST Microelectronics | 类似代替 | TO-126-3 |
高压快速开关NPN功率晶体管 High voltage fast-switching NPN power transistor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review