Technical parameters/dissipated power: 3W (Ta), 136.4W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 2600pF @50V(Vds)
Technical parameters/dissipated power (Max): 3W (Ta), 136.4W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUD35N10-26P-E3
|
Vishay Siliconix | 类似代替 | TO-252-3 |
Trans MOSFET N-CH 100V 12A 3Pin(2+Tab) TO-252AA
|
||
SUD35N10-26P-E3
|
Vishay Semiconductor | 类似代替 |
Trans MOSFET N-CH 100V 12A 3Pin(2+Tab) TO-252AA
|
|||
SUD50N10-18P-GE3
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 100V 8.2A DPAK
|
||
SUD50N10-18P-GE3
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 100V 8.2A DPAK
|
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