Technical parameters/drain source resistance: 12 mΩ
Technical parameters/dissipated power: 3 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/width: 6.22 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Intertechnology | 类似代替 | TO-252-3 |
P 通道 MOSFET,30V 至 80V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
||
SUD50P04-08-GE3
|
VISHAY | 类似代替 | TO-252-3 |
P 通道 MOSFET,30V 至 80V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
||
SUD50P04-08-GE3
|
Vishay Siliconix | 类似代替 | TO-252-3 |
P 通道 MOSFET,30V 至 80V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
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