Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0027 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 3.1 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 90A
Technical parameters/rise time: 7 ns
Technical parameters/Input capacitance (Ciss): 5286pF @20V(Vds)
Technical parameters/rated power (Max): 3.1 W
Technical parameters/descent time: 7 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.1W (Ta), 125W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.51 mm
External dimensions/width: 4.65 mm
External dimensions/height: 15.49 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 50
Other/Manufacturing Applications: Industrial, power management
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK653R4-40C
|
NXP | 功能相似 | SOT-78 |
NXP BUK653R4-40C 晶体管, MOSFET, N沟道, 100 A, 40 V, 3050 µohm, 10 V, 2.3 V
|
||
BUK753R1-40E
|
NXP | 功能相似 | TO-220 |
NXP BUK753R1-40E 晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0026 ohm, 10 V, 3 V
|
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