Technical parameters/rated power: 40 W
Technical parameters/breakdown voltage: 19 V
Technical parameters/dissipated power: 40 W
Technical parameters/clamp voltage: 28 V
Technical parameters/test current: 1 mA
Technical parameters/maximum reverse breakdown voltage: 21 V
Technical parameters/peak pulse power: 40 W
Technical parameters/minimum reverse breakdown voltage: 19 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/operating temperature: -55℃ ~ 150℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.94 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Automotive grade
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Rochester | 类似代替 | CASE 318-08 |
On Semiconductor 共阳配置中的双表面安装瞬态电压抑制器 特别适用于自动插入 低泄漏
|
||
MMBZ20VALT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
On Semiconductor 共阳配置中的双表面安装瞬态电压抑制器 特别适用于自动插入 低泄漏
|
||
|
|
Motorola | 类似代替 |
On Semiconductor 共阳配置中的双表面安装瞬态电压抑制器 特别适用于自动插入 低泄漏
|
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