Technical parameters/frequency: 2.14 GHz
Technical parameters/halogen-free state: Halogen Free
Technical parameters/drain source voltage (Vds): 65 V
Technical parameters/output power: 34 W
Technical parameters/gain: 17.9 dB
Technical parameters/test current: 970 mA
Technical parameters/rated voltage: 65 V
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: NI-780S
External dimensions/packaging: NI-780S
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MRF8S19140HSR3
|
NXP | 类似代替 | NI-780S |
Single CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 1930-1990MHz, 34W Avg., 28V
|
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