Technical parameters/frequency: 120 MHz
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 900 mW
Technical parameters/breakdown voltage (collector emitter): 120 V
Technical parameters/minimum current amplification factor (hFE): 100 @100mA, 5V
Technical parameters/rated power (Max): 900 mW
Technical parameters/DC current gain (hFE): 120
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 900 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 8 mm
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Manufacturing Applications: Industrial, audio, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSA916YTA
|
ON Semiconductor | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR KSA916YTA 单晶体管 双极, PNP, -120 V, 120 MHz, 900 mW, -800 mA, 120 hFE
|
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