Technical parameters/forward voltage: 0.8 V
Technical parameters/Maximum reverse voltage (Vrrm): 100 V
Technical parameters/forward current: 5000 mA
Technical parameters/Maximum forward surge current (Ifsm): 200 A
Technical parameters/maximum reverse leakage current (Ir): 200 uA
Technical parameters/forward voltage (Max): 800mV @5A
Technical parameters/forward current (Max): 5 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/operating temperature: 175℃ (Max)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-201AD
External dimensions/packaging: DO-201AD
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Box (TB)
Other/Minimum Packaging: 1000
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
50SQ100TR
|
International Rectifier | 类似代替 |
肖特基整流器， 5 A Schottky Rectifier, 5 A
|
|||
50SQ100TR
|
Vishay Semiconductor | 类似代替 | DO-204AR |
肖特基整流器， 5 A Schottky Rectifier, 5 A
|
||
SB5H100-E3/54
|
Vishay Semiconductor | 类似代替 | DO-201AD |
4A 至 9A，Vishay Semiconductor 肖特基整流器是半导体二极管，具有极低的正向电压降和非常快的切换作用。 肖特基二极管的反向恢复时间非常快。 肖特基二极管适用于需要快速切换和低功耗的应用。 ### 肖特基整流器，Vishay Semiconductor
|
||
SB5H100-E3/54
|
VISHAY | 类似代替 | DO-201AD |
4A 至 9A，Vishay Semiconductor 肖特基整流器是半导体二极管，具有极低的正向电压降和非常快的切换作用。 肖特基二极管的反向恢复时间非常快。 肖特基二极管适用于需要快速切换和低功耗的应用。 ### 肖特基整流器，Vishay Semiconductor
|
||
SB5H100HE3/54
|
Vishay Semiconductor | 完全替代 | DO-201AD |
高压肖特基整流器高阻隔技术改进高温性能 High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
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