Technical parameters/drain source voltage (Vds): 30 V
Encapsulation parameters/Encapsulation: DFN
External dimensions/packaging: DFN
Other/Product Catalog: MOS(Field Effect Transistor
Other/leakage source voltage (Vdss): 30V
Other/continuous drain current (Id) (at 25 ° C): 84A(Tc)
Other/gate source threshold voltage: 2.5V @ 250uA
Other/leakage source conduction resistance: 1mΩ @ 20A,10V
Other/maximum power dissipation (Ta=25 ° C): 83W(Tc)
Other/Type: Nchannel
Other/Product Code: C373436
Other/Packaging Specifications: DFN 5x6
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