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Model RF1S4N100SM
Description 4.3A, 1000V, 3.5Ω, High Voltage, N-Channel Power MOSFETs
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Brand: Fairchild
Packaging TO-263-3
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5392) Minimum order quantity(1)
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Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 3.5 Ω

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 150 W

Technical parameters/drain source voltage (Vds): 1000 V

Technical parameters/leakage source breakdown voltage: 1000 V

Technical parameters/Continuous drain current (Ids): 4.3A

Technical parameters/rise time: 50 ns

Technical parameters/descent time: 50 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 55 ℃

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.67 mm

External dimensions/width: 9.65 mm

External dimensions/height: 4.83 mm

External dimensions/packaging: TO-263-3

Other/Product Lifecycle: Unknown

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
RF1S4N100SM RF1S4N100SM Intersil 功能相似 TO-263
4.3A, 1000V, 3.5Ω, High Voltage, N-Channel Power MOSFETs
PDF
RF1S4N100SM RF1S4N100SM Fairchild 功能相似 TO-263-3
4.3A, 1000V, 3.5Ω, High Voltage, N-Channel Power MOSFETs

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