Technical parameters/power supply voltage (DC): 26.0V (max)
Technical parameters/rise/fall time: 100ns (Max)
Technical parameters/number of output interfaces: 1
Technical parameters/output voltage: 28.3 V
Technical parameters/power supply current: 2.5 mA
Technical parameters/dissipated power: 500 mW
Technical parameters/rise time: 100 ns
Technical parameters/descent time: 100 ns
Technical parameters/descent time (Max): 100 ns
Technical parameters/rise time (Max): 100 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 500 mW
Technical parameters/power supply voltage: 12V ~ 26V
Technical parameters/power supply voltage (Min): 12 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.25 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TD351IN
|
ST Microelectronics | 类似代替 | DIP-8 |
先进的IGBT / MOSFET驱动器 Advanced IGBT/MOSFET Driver
|
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