Technical parameters/dissipated power: 126W (Tc)
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/rise time: 23 ns
Technical parameters/Input capacitance (Ciss): 1585pF @25V(Vds)
Technical parameters/descent time: 19 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 126W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/packaging: TO-3-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Rail
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQA12P20
|
ON Semiconductor | 类似代替 | TO-3-3 |
200V P沟道MOSFET 200V P-Channel MOSFET
|
||
SFH
|
Fairchild | 功能相似 | TO-3 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
|
||
SFH
|
Osram Opto | 功能相似 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
|
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