Technical parameters/output current: 100mA @3.3V
Technical parameters/power supply current: 11 mA
Technical parameters/number of circuits: 1
Technical parameters/dissipated power: 1020 mW
Technical parameters/bandwidth: 100 MHz
Technical parameters/conversion rate: 55.0 V/μs
Technical parameters/input compensation voltage: 3 mV
Technical parameters/input bias current: 1.2 pA
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/3dB bandwidth: 100 MHz
Technical parameters/dissipated power (Max): 1020 mW
Technical parameters/Common Mode Rejection Ratio (Min): 60dB ~ 75dB
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: 0℃ ~ 70℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
THS4120CDR
|
TI | 完全替代 | SOIC-8 |
3.3V, 100MHz, 43V/us, Fully Differential CMOS Amplifier w/Shutdown
|
||
THS4120ID
|
TI | 类似代替 | SOIC-8 |
3.3V,100MHz,43V/us,全差分CMOS运放(带关断功能)
|
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