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Technical parameters/output current: 45mA @5V
Technical parameters/power supply current: 12.3 mA
Technical parameters/number of circuits: 1
Technical parameters/number of channels: 1
Technical parameters/dissipated power: 1.02 W
Technical parameters/common mode rejection ratio: 80 dB
Technical parameters/Input compensation drift: 4.50 µV/K
Technical parameters/bandwidth: 150 MHz
Technical parameters/conversion rate: 52.0 V/μs
Technical parameters/gain bandwidth product: 225 MHz
Technical parameters/input compensation voltage: 2 mV
Technical parameters/input bias current: 2 µA
Technical parameters/available channels: S
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/3dB bandwidth: 150 MHz
Technical parameters/gain bandwidth: 225 MHz
Technical parameters/dissipated power (Max): 1020 mW
Technical parameters/Common Mode Rejection Ratio (Min): 75dB ~ 85dB
Technical parameters/power supply voltage (Max): 30V ~ 50V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
THS4130ID
|
TI | 类似代替 | SOIC-8 |
TEXAS INSTRUMENTS THS4130ID 差分放大器, 高速, 1 放大器, 2 mV, 2 dB, 150 MHz, -40 °C, 85 °C
|
||
THS4131CD
|
National Semiconductor | 类似代替 | SOIC |
TEXAS INSTRUMENTS THS4131CD 单运算放大器
|
||
THS4131ID
|
National Semiconductor | 类似代替 | SOIC |
TEXAS INSTRUMENTS THS4131ID 差分放大器, 低噪, 1 放大器, 3 V, 69 dB, 150 MHz, -40 °C, 85 °C
|
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