Technical parameters/frequency: 3 MHz
Technical parameters/rated voltage (DC): -80.0 V
Technical parameters/rated current: -3.00 A
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 40 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/thermal resistance: 3.125℃/W (RθJC)
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 10 @3A, 4V
Technical parameters/rated power (Max): 2 W
Technical parameters/DC current gain (hFE): 50
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.28 mm
External dimensions/width: 4.83 mm
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TIP29AG
|
ON Semiconductor | 类似代替 | TO-220-3 |
ON SEMICONDUCTOR TIP29AG 双极晶体管
|
||
TIP29BG
|
ON Semiconductor | 类似代替 | TO-220-3 |
ON SEMICONDUCTOR TIP29BG 双极晶体管
|
||
TIP30CG
|
ON Semiconductor | 类似代替 | TO-220-3 |
ON SEMICONDUCTOR TIP30CG. 双极晶体管
|
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