Technical parameters/rated voltage (DC): -100 V
Technical parameters/rated current: -3.00 A
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 40.0 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 10 @3A, 4V
Technical parameters/rated power (Max): 2 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TIP32CTU
|
Fairchild | 类似代替 | TO-220-3 |
Power PNP 晶体管,Fairchild Semiconductor ### 双极晶体管,Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案,用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
TIP32CTU
|
ON Semiconductor | 类似代替 | TO-220-3 |
Power PNP 晶体管,Fairchild Semiconductor ### 双极晶体管,Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案,用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review