Technical parameters/dissipated power: 2000 mW
Technical parameters/breakdown voltage (collector emitter): 250 V
Technical parameters/minimum current amplification factor (hFE): 10
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 40 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.67 mm
External dimensions/width: 4.83 mm
External dimensions/height: 16.51 mm
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NTE Electronics | 类似代替 |
高压硅NPN功率晶体管 High Voltage NPN Silicon Power Transistors
|
|||
TIP47
|
Multicomp | 类似代替 | TO-220 |
高压硅NPN功率晶体管 High Voltage NPN Silicon Power Transistors
|
||
|
|
Poinn | 类似代替 |
高压硅NPN功率晶体管 High Voltage NPN Silicon Power Transistors
|
|||
TIP47
|
ON Semiconductor | 类似代替 | TO-220-3 |
高压硅NPN功率晶体管 High Voltage NPN Silicon Power Transistors
|
||
TIP47
|
ST Microelectronics | 类似代替 | TO-220-3 |
高压硅NPN功率晶体管 High Voltage NPN Silicon Power Transistors
|
||
TIP47G
|
ON Semiconductor | 类似代替 | TO-220-3 |
ON SEMICONDUCTOR TIP47G 射频双极晶体管
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review