Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 500 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 250 @100µA, 5V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TIS97
|
ON Semiconductor | 功能相似 | TO-92 |
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-92, 3 PIN
|
||
TIS97
|
Fairchild | 功能相似 | TO-226-3 |
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-92, 3 PIN
|
||
TIS97
|
Freescale | 功能相似 |
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-92, 3 PIN
|
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