Technical parameters/drain source voltage (Vds): 650 V
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Field effect transistor types: N-ch
Other/Rain to Source Voltage: 650V
Other/Continuous drain current: 11.1A
Other/Rain to Source on State Resistance: 0.39Ω(max)@V_GS=10V
Other/Package: TO-220SIS
Other/Remarks: Generation: DTMOSIV/ゲート Input Charge: 25nC (typ.)/Input Capacity: 890pF (typ.)
Other/Product Name: Small signal MOS FET 1 pixel
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