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Technical parameters/output current: ≤30 mA
Technical parameters/power supply current: 550 µA
Technical parameters/number of circuits: 2
Technical parameters/number of channels: 2
Technical parameters/dissipated power: 725 mW
Technical parameters/common mode rejection ratio: 85 dB
Technical parameters/Input compensation drift: 2.00 µV/K
Technical parameters/bandwidth: 1.70 MHz
Technical parameters/conversion rate: 500 mV/μs
Technical parameters/gain bandwidth product: 1.7 MHz
Technical parameters/input compensation voltage: 150 µV
Technical parameters/input bias current: 35 nA
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 2.8 MHz
Technical parameters/dissipated power (Max): 725 mW
Technical parameters/Common Mode Rejection Ratio (Min): 85 dB
Technical parameters/power supply voltage (Max): 40 V
Technical parameters/power supply voltage (Min): 4 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.91 mm
External dimensions/height: 1.58 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TLE2022CD
|
TI | 类似代替 | SOIC-8 |
TEXAS INSTRUMENTS TLE2022CD 运算放大器, 双路, 1.7 MHz, 2个放大器, 0.5 V/µs, ± 2V 至 ± 20V, SOIC, 8 引脚
|
||
TLE2022IDR
|
TI | 类似代替 | SOIC-8 |
TEXAS INSTRUMENTS TLE2022IDR 芯片, 运算放大器, 精密, 1.7MHZ, 0.5V/uS, SOIC-8
|
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