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Model STP55NE06
Description N - Channel enhanced single feature size power MOSFET N - CHANNEL INTERNATIONAL MODE SINGLE FEATURE SIZE POWER MOSFET
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Brand: ST Microelectronics
Packaging TO-220
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5708) Minimum order quantity(1)
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Technical parameters/drain source resistance: 19.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 130 W

Technical parameters/leakage source breakdown voltage: 60.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 55.0 A

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-220

External dimensions/packaging: TO-220

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: Non-Compliant

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