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Model SI2327DS-T1-E3
Description VISHAY SI2327DS-T1-E3 Transistor, MOSFET, P-channel, -380 mA, -200 V, 1.96 ohm, -6 V, -4.5 V
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Brand: Vishay Semiconductor
Packaging SOT-23
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1198) Minimum order quantity(1)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 1.96 Ω

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 750 mW

Technical parameters/drain source voltage (Vds): -200 V

Technical parameters/Continuous drain current (Ids): -490 mA

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SOT-23

External dimensions/packaging: SOT-23

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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