Technical parameters/drain source resistance: 55.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.50 W
Technical parameters/Continuous drain current (Ids): 4.70 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: TSSOP
External dimensions/packaging: TSSOP
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI6435ADQ-T1-E3
|
Vishay Semiconductor | 功能相似 | TSSOP |
MOSFET P-CH 30V 4.7A 8-TSSOP
|
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