Technical parameters/drain source resistance: 0.006 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.9 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 20.0 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.9W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAKSO-8
External dimensions/length: 6.15 mm
External dimensions/width: 5.15 mm
External dimensions/height: 1.04 mm
External dimensions/packaging: PowerPAKSO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7138DP-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET 60V 30A 96W 7.8mohm @ 10V
|
||
SI7478DP-T1-E3
|
Vishay Siliconix | 完全替代 | PowerPAKSO-8 |
VISHAY SI7478DP-T1-E3 场效应管, N通道, MOSFET, 60V, 20A, POWERPAK SO
|
||
SI7478DP-T1-E3
|
Vishay Semiconductor | 完全替代 | PowerPAK SO |
VISHAY SI7478DP-T1-E3 场效应管, N通道, MOSFET, 60V, 20A, POWERPAK SO
|
||
SI7478DP-T1-GE3
|
Vishay Intertechnology | 功能相似 | SO-8 |
MOSFET N-CH 60V 15A PPAK SO-8
|
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