Technical parameters/frequency: 100 MHz
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 1.35 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 40 @100mA, 5V
Technical parameters/rated power (Max): 1.35 W
Technical parameters/DC current gain (hFE): 40
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-89-3
External dimensions/height: 1.6 mm
External dimensions/packaging: SOT-89-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSR30
|
Kyoto Tool | 功能相似 |
NXP BSR30 单晶体管 双极, PNP, -60 V, 100 MHz, 1.35 W, -1 A, 30 hFE 新
|
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