Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 6.6A
Technical parameters/rise time: 16 ns
Technical parameters/Input capacitance (Ciss): 535pF @10V(Vds)
Technical parameters/descent time: 14 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2400 mW
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-75
External dimensions/packaging: SC-75
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIB422EDK-T1-GE3
|
Vishay Siliconix | 功能相似 | SC-75-6L |
MOSFET N-CH 20V 9A SC-75-6
|
||
SIB422EDK-T1-GE3
|
VISHAY | 功能相似 | SC-75-6L |
MOSFET N-CH 20V 9A SC-75-6
|
||
SIB422EDK-T1-GE3
|
Vishay Semiconductor | 功能相似 | PowerPAK-SC75-6 |
MOSFET N-CH 20V 9A SC-75-6
|
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