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Model SIHA2N80E-GE3
Description Transistor, MOSFET, N-channel, 2.8 A, 800 V, 2.38 ohm, 10 V, 4 V
Product QR code
Brand: VISHAY
Packaging TO-220
Delivery time
Packaging method
Standard packaging quantity 1
5.12  yuan 5.12yuan
10+:
$ 6.1464
100+:
$ 5.8391
500+:
$ 5.6342
1000+:
$ 5.6240
2000+:
$ 5.5830
5000+:
$ 5.5318
7500+:
$ 5.4908
10000+:
$ 5.4703
Quantity
10+
100+
500+
1000+
2000+
Price
$6.1464
$5.8391
$5.6342
$5.6240
$5.5830
Price $ 6.1464 $ 5.8391 $ 5.6342 $ 5.6240 $ 5.5830
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2823) Minimum order quantity(10)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 2.38 Ω

Technical parameters/dissipated power: 29 W

Technical parameters/threshold voltage: 4 V

Technical parameters/drain source voltage (Vds): 800 V

Technical parameters/rise time: 7 ns

Technical parameters/Input capacitance (Ciss): 315pF @100V(Vds)

Technical parameters/descent time: 27 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 29000 mW

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220

External dimensions/packaging: TO-220

Compliant with standards/RoHS standards: RoHS Compliant

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