Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.85 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 104 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/Input capacitance (Ciss): 311pF @100V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 104 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.51 mm
External dimensions/width: 4.65 mm
External dimensions/height: 9.01 mm
External dimensions/packaging: TO-220-3
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Consumer Electronics, Power Management, Industrial, Industrial, Consumer Electronics, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Infineon | 功能相似 | TO-220-3 |
VISHAY IRF730PBF. 晶体管, MOSFET, N沟道, 5.5 A, 400 V, 1 ohm, 10 V, 4 V
|
||
IRF730PBF
|
Vishay Precision Group | 功能相似 | TO-220 |
VISHAY IRF730PBF. 晶体管, MOSFET, N沟道, 5.5 A, 400 V, 1 ohm, 10 V, 4 V
|
||
IRF730PBF
|
Vishay Intertechnology | 功能相似 | TO-220 |
VISHAY IRF730PBF. 晶体管, MOSFET, N沟道, 5.5 A, 400 V, 1 ohm, 10 V, 4 V
|
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