Technical parameters/rated power: 1.6 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 1.6 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 0.73A
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 125pF @25V(Vds)
Technical parameters/rated power (Max): 1.6 W
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.6W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-89-3
External dimensions/packaging: SOT-89-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Consumer electronics, electronic design, commercial, low voltage
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TN2510N8
|
Microchip | 完全替代 |
Trans MOSFET N-CH 100V 0.73A 4Pin(3+Tab) SOT-89
|
|||
|
TN2510N8
|
Supertex | 完全替代 | SOT-89 |
Trans MOSFET N-CH 100V 0.73A 4Pin(3+Tab) SOT-89
|
||
VN2450N8-G
|
Microchip | 类似代替 | SOT-89-3 |
Trans MOSFET N-CH 500V 0.25A 4Pin(3+Tab) SOT-89
|
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