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Model SIR836DP-T1-GE3
Description NChannel 40-V (D-S) MOSFET N-Channel 40-V (D-S) MOSFET
Product QR code
Brand: Vishay Semiconductor
Packaging
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
3.81  yuan 3.81yuan
5+:
$ 5.1489
25+:
$ 4.7675
50+:
$ 4.5005
100+:
$ 4.3861
500+:
$ 4.3098
2500+:
$ 4.2145
5000+:
$ 4.1763
10000+:
$ 4.1191
Quantity
5+
25+
50+
100+
500+
Price
$5.1489
$4.7675
$4.5005
$4.3861
$4.3098
Price $ 5.1489 $ 4.7675 $ 4.5005 $ 4.3861 $ 4.3098
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5511) Minimum order quantity(5)
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Technical parameters/drain source resistance: 0.015 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 15.6 W

Technical parameters/threshold voltage: 1.2 V

Technical parameters/drain source voltage (Vds): 40 V

Technical parameters/Input capacitance (Ciss): 600pF @20V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 3900 mW

Package parameters/number of pins: 8

External dimensions/height: 1.04 mm

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIR838DP-T1-GE3 SIR838DP-T1-GE3 Vishay Siliconix 功能相似 SOIC-8
MOSFET N-CH 150V 35A PPAK SO-8
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SIR838DP-T1-GE3 SIR838DP-T1-GE3 Vishay Semiconductor 功能相似
MOSFET N-CH 150V 35A PPAK SO-8
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