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Model SIHD6N62E-GE3
Description VISHAY SIHD6N62E-GE3 Power Field Effect Transistor, MOSFET, N-channel, 6 A, 620 V, 0.78 ohm, 10 V
Product QR code
Brand: Vishay Semiconductor
Packaging TO-252
Delivery time
Packaging method Bulk
Standard packaging quantity 1
3.94  yuan 3.94yuan
5+:
$ 5.3163
25+:
$ 4.9225
50+:
$ 4.6468
100+:
$ 4.5287
500+:
$ 4.4499
2500+:
$ 4.3515
5000+:
$ 4.3121
10000+:
$ 4.2530
Quantity
5+
25+
50+
100+
500+
Price
$5.3163
$4.9225
$4.6468
$4.5287
$4.4499
Price $ 5.3163 $ 4.9225 $ 4.6468 $ 4.5287 $ 4.4499
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7096) Minimum order quantity(5)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.78 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 78 W

Technical parameters/drain source voltage (Vds): 620 V

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252

External dimensions/packaging: TO-252

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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