Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.00205 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 62.5 W
Technical parameters/threshold voltage: 1.1 V
Technical parameters/input capacitance: 3595pF @15V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/thermal resistance: 4.5℃/W (RθJC)
Technical parameters/Input capacitance (Ciss): 3595pF @15V(Vds)
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 62.5 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAKSO-8
External dimensions/length: 6.25 mm
External dimensions/width: 5.26 mm
External dimensions/height: 1.12 mm
External dimensions/packaging: PowerPAKSO-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIRA04DP-T1-GE3
|
VISHAY | 功能相似 | PowerPAKSO-8 |
N 通道 MOSFET，TrenchFET® Gen IV，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
|
||
SIRA04DP-T1-GE3
|
Vishay Semiconductor | 功能相似 | SO-8 |
N 通道 MOSFET，TrenchFET® Gen IV，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
|
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