Technical parameters/dissipated power: 740 mW
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/rise time: 4 ns
Technical parameters/Input capacitance (Ciss): 60pF @25V(Vds)
Technical parameters/descent time: 5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 740mW (Ta)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.21 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TP2104N3-G
|
Microchip | 类似代替 | TO-92-3 |
Supertex P 通道增强模式 MOSFET 晶体管 Microchip 的 Supertex 系列 P 通道增强模式(常闭)DMOS FET 晶体管适合各种需要低阈值电压、高击穿电压、高输入阻抗、低输入电容和快速切换速度的开关和放大应用。 ### MOSFET 晶体管,Microchip
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review