Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 330mW (Ta)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 2.7A
Technical parameters/Input capacitance (Ciss): 470pF @10V(Vds)
Technical parameters/dissipated power (Max): 330mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SMD-8
External dimensions/packaging: SMD-8
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5853DDC-T1-E3
|
VISHAY | 功能相似 | 1206 |
MOSFET P-CH 20V 4A 1206-8
|
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