Technical parameters/dissipated power: 388000 mW
Technical parameters/breakdown voltage (collector emitter): 55 V
Technical parameters/gain: 8dB ~ 9dB
Technical parameters/minimum current amplification factor (hFE): 10 @20mA, 5V
Technical parameters/rated power (Max): 290 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 388000 mW
Encapsulation parameters/installation method: Screw
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: CX-55
External dimensions/packaging: CX-55
Physical parameters/operating temperature: 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Advanced Semiconductor | 功能相似 |
NPN SILICON RF-MICROWAVE POWER TRANSISTOR
|
|||
TPR175
|
Microsemi | 功能相似 | CX-55 |
NPN SILICON RF-MICROWAVE POWER TRANSISTOR
|
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