Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.027 Ω
Technical parameters/dissipated power: 1.25 W
Technical parameters/threshold voltage: 850 mV
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/rise time: 1.4 ns
Technical parameters/Input capacitance (Ciss): 900pF @10V(Vds)
Technical parameters/descent time: 5.9 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.25 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/length: 3.1 mm
External dimensions/width: 1.7 mm
External dimensions/height: 1.2 mm
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Signal processing, audio
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDN358P
|
Rochester | 功能相似 | SuperSOT |
ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDN358P, 1.5 A, Vds=30 V, 3引脚 SOT-23封装
|
||
FDN358P
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDN358P, 1.5 A, Vds=30 V, 3引脚 SOT-23封装
|
||
FDN358P
|
Fairchild | 功能相似 | SOT-23-3 |
ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDN358P, 1.5 A, Vds=30 V, 3引脚 SOT-23封装
|
||
NTR4501NT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR NTR4501NT1G 晶体管, MOSFET, N沟道, 3.2 A, 20 V, 80 mohm, 4.5 V, 1.2 V
|
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