Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 45A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Active
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK1358
|
Toshiba | 功能相似 | TO-3 |
Trans MOSFET N-CH 900V 9A 3Pin(3+Tab) TO-3PNe
|
||
2SK1358
|
New Jersey Semiconductor | 功能相似 |
Trans MOSFET N-CH 900V 9A 3Pin(3+Tab) TO-3PNe
|
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