Technical parameters/breakdown voltage: 157 V
Technical parameters/dissipated power: 600 W
Technical parameters/clamp voltage: 206 V
Technical parameters/peak pulse power: 600 W
Technical parameters/minimum reverse breakdown voltage: 146 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214-2
External dimensions/packaging: DO-214-2
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMBJ130D-M3/I
|
Vishay Semiconductor | 功能相似 | DO-214AA-2 |
ESD 抑制器/TVS 二极管 130V 600W UniDir TransZorb 3.5% Tol
|
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