Technical parameters/dissipated power: 1 W
Technical parameters/peak pulse power: 600 W
Technical parameters/minimum reverse breakdown voltage: 144 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AA-2
External dimensions/packaging: DO-214AA-2
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMBJ130CA-E3/52
|
VISHAY | 类似代替 | DO-214AA |
TRANSZORB® 瞬态电压抑制器表面安装双向 600W,SMBJ 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
||
SMBJ130CA-E3/52
|
Vishay Siliconix | 类似代替 |
TRANSZORB® 瞬态电压抑制器表面安装双向 600W,SMBJ 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
|||
SMBJ130CA-E3/5B
|
Vishay Semiconductor | 类似代替 | DO-214AA |
Diode TVS Single Bi-Dir 130V 600W 2Pin SMB T/R
|
||
SMBJ130CAHE3/52
|
Vishay Semiconductor | 类似代替 | DO-214AA |
Diode TVS Single Bi-Dir 130V 600W 2Pin SMB T/R
|
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