Technical parameters/working voltage: 5 V
Technical parameters/breakdown voltage: 6.4 V
Technical parameters/number of channels: 1
Technical parameters/forward voltage: 2.5 V
Technical parameters/dissipated power: 200 W
Technical parameters/clamp voltage: 9.2 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DO-219AB
External dimensions/packaging: DO-219AB
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMF5V0A-E3-08
|
VISHAY | 功能相似 | DO-219AB |
Trans Voltage Suppressor Diode, 1000W, 5V V(RWM), Unidirectional, 1Element, Silicon, DO-219AB, ROHS COMPLIANT, PLASTIC, SMF, 2Pin
|
||
SMF5V0A-E3-08
|
Vishay Intertechnology | 功能相似 | DO-219AB |
Trans Voltage Suppressor Diode, 1000W, 5V V(RWM), Unidirectional, 1Element, Silicon, DO-219AB, ROHS COMPLIANT, PLASTIC, SMF, 2Pin
|
||
SMF5V0A-E3-08
|
Vishay Semiconductor | 功能相似 | DO-219AB-2 |
Trans Voltage Suppressor Diode, 1000W, 5V V(RWM), Unidirectional, 1Element, Silicon, DO-219AB, ROHS COMPLIANT, PLASTIC, SMF, 2Pin
|
||
SMF5V0A-E3-18
|
VISHAY | 功能相似 | DO-219AB |
Trans Voltage Suppressor Diode, 1000W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-219AB, SMF, 2 PIN
|
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