Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.385 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 80 @5mA, 10V
Technical parameters/rated power (Max): 187 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 385 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-363
External dimensions/packaging: SOT-363
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MUN5235DW1T1G
|
ON Semiconductor | 功能相似 | SC-70-6 |
ON Semiconductor ### 数字晶体管,On Semiconductor 配备电阻器的双极性晶体管也称为数字晶体管或偏流电阻器的晶体管,包含一个或两个集成电阻器。 单一系列输入电阻器,或两个电阻器的分压器能直接从数字源驱动这些设备。 提供单和双晶体管型号。
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SMUN5235DW1T1G
|
ON Semiconductor | 功能相似 | SC-70-6 |
MUN5235DW1 系列 50 V 100 mA 双 NPN 偏置 电阻 晶体管 - SOT-363
|
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