Technical parameters/tolerances: ±5 %
Technical parameters/forward voltage: 1.1 V
Technical parameters/dissipated power: 500 mW
Technical parameters/test current: 20 mA
Technical parameters/forward current: 200 mA
Technical parameters/voltage regulation value: 4.7 V
Technical parameters/forward voltage (Max): 1.1V @200mA
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: SOD-80
External dimensions/length: 3.7 mm
External dimensions/width: 1.6 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: SOD-80
Physical parameters/operating temperature: 175 ℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZV55-C4V7,135
|
NXP | 功能相似 | Mini-MELF |
Mini-MELF 4.7V 0.5W(1/2W)
|
||
TZM5230B-GS18
|
VISHAY | 类似代替 | SOD-80 |
稳压二极管 4.7 Volt 0.5 Watt 5%
|
||
TZMC4V7-GS08
|
VISHAY | 类似代替 | SOD-80 |
500mW,TZM 系列,Vishay Semiconductor Vishay 的表面安装 (SMT) 齐纳二极管额定值为 500mW,击穿电压范围从 3.3 至 75V
|
||
TZMC4V7-GS18
|
VISHAY | 功能相似 | SOD-80 |
500mW,TZM 系列,Vishay Semiconductor Vishay 的表面安装 (SMT) 齐纳二极管额定值为 500mW,击穿电压范围从 3.3 至 75V ### 齐纳二极管,Vishay Semiconductor
|
||
TZMC4V7-GS18
|
Vishay Semiconductor | 功能相似 | SOD-80-2 |
500mW,TZM 系列,Vishay Semiconductor Vishay 的表面安装 (SMT) 齐纳二极管额定值为 500mW,击穿电压范围从 3.3 至 75V ### 齐纳二极管,Vishay Semiconductor
|
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