Chip AI consultant
Technical parameters/power supply voltage (DC): 40.0V (max)
Technical parameters/rise/fall time: 40ns, 30ns
Technical parameters/number of output interfaces: 2
Technical parameters/rise time: 140 ns
Technical parameters/descent time: 130 ns
Technical parameters/descent time (Max): 130 ns
Technical parameters/rise time (Max): 140 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 5V ~ 40V
Technical parameters/power supply voltage (Max): 40 V
Technical parameters/power supply voltage (Min): 5 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 16
Encapsulation parameters/Encapsulation: SOIC-16
External dimensions/height: 2.35 mm
External dimensions/packaging: SOIC-16
Physical parameters/operating temperature: -25℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Unitrode | 类似代替 | SOP |
具有 40V VDD、100ns 传播延迟且每个输出均具有两个输入的 1.5A/1.5A 双通道栅极驱动器 16-SOIC -40 to 85
|
||
UC2706DW
|
TI | 类似代替 | SOIC-16 |
具有 40V VDD、100ns 传播延迟且每个输出均具有两个输入的 1.5A/1.5A 双通道栅极驱动器 16-SOIC -40 to 85
|
||
UC3706DW
|
TI | 类似代替 | SOIC-16 |
MOSFET 和 IGBT 驱动器，高达 2.5A，Texas Instruments Texas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出，且提供各种配置和封装类型。 ### MOSFET & IGBT 驱动器，Texas Instruments
|
||
UC3706DWTR
|
TI | 类似代替 | SOIC-16 |
具有 40V VDD、40ns 下降时间且每个输出均具有两个输入的 1.5A/1.5A 双通道栅极驱动器 16-SOIC 0 to 70
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review