Chip AI consultant
Technical parameters/power supply voltage (DC): 40.0V (max)
Technical parameters/rise/fall time: 20 ns
Technical parameters/number of output interfaces: 2
Technical parameters/dissipated power: 1000 mW
Technical parameters/rise time: 80 ns
Technical parameters/descent time: 80 ns
Technical parameters/descent time (Max): 80 ns
Technical parameters/rise time (Max): 80 ns
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/dissipated power (Max): 1000 mW
Technical parameters/power supply voltage: 5V ~ 40V
Technical parameters/power supply voltage (Min): 5 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 16
Encapsulation parameters/Encapsulation: SOIC-16
External dimensions/length: 10.28 mm
External dimensions/width: 7.52 mm
External dimensions/height: 2.35 mm
External dimensions/packaging: SOIC-16
Physical parameters/operating temperature: 0℃ ~ 70℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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TI | 类似代替 | SOIC-16 |
双高速FET驱动器 DUAL HIGH-SPEED FET DRIVER
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UC3709DW
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TI | 类似代替 | SOIC-16 |
MOSFET 和 IGBT 驱动器，高达 2.5A，Texas Instruments Texas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出，且提供各种配置和封装类型。 ### MOSFET & IGBT 驱动器，Texas Instruments
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