Technical parameters/forward voltage: 1 V
Technical parameters/reverse recovery time: 50 ns
Technical parameters/Maximum reverse voltage (Vrrm): 300 V
Technical parameters/forward current: 3 A
Technical parameters/maximum reverse leakage current (Ir): 10 uA
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-201AD
External dimensions/packaging: DO-201AD
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Minimum Packaging: 1000
Compliant with standards/RoHS standards: Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ER304
|
Microsemi | 功能相似 |
Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, DO-201AD,
|
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ER304
|
Transys Electronics | 功能相似 |
Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, DO-201AD,
|
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UF5403-E3/54
|
VISHAY | 完全替代 | DO-201AD |
2A 至 5A,Vishay Semiconductor Vishay 超快恢复整流器,具有非常快速的低至 15ns 反向恢复时间和高达 1500V 的电压级别。 典型应用包括较高频率切换模式电源 (SMPS)、反相器和续流二极管。 ### 二极管和整流器,Vishay Semiconductor
|
||
UF5403-E3/54
|
Vishay Siliconix | 完全替代 |
2A 至 5A,Vishay Semiconductor Vishay 超快恢复整流器,具有非常快速的低至 15ns 反向恢复时间和高达 1500V 的电压级别。 典型应用包括较高频率切换模式电源 (SMPS)、反相器和续流二极管。 ### 二极管和整流器,Vishay Semiconductor
|
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