Technical parameters/drain source resistance: 47.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.70 W
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): -4.50 A to 4.50 A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOP
External dimensions/packaging: SOP
Other/Product Lifecycle: End of Life
Compliant with standards/RoHS standards: RoHS Compliant
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