Technical parameters/breakdown voltage (collector emitter): 12 V
Technical parameters/gain: 7dB ~ 9dB
Technical parameters/minimum current amplification factor (hFE): 70 @7mA, 3V
Technical parameters/rated power (Max): 200 mW
Encapsulation parameters/Encapsulation: SOT-323-6
External dimensions/packaging: SOT-323-6
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Renesas Electronics | 功能相似 | SOT-363 |
Rf Small Signal Transistor Bipolar/Hbt
|
||
UPA810T-A
|
California Eastern Laboratories | 类似代替 | SC-70-6 |
射频(RF)双极晶体管 NPN High Frequency
|
||
UPA810T-A
|
Silicon Strorage Technology | 类似代替 | SO-6 |
射频(RF)双极晶体管 NPN High Frequency
|
||
UPA810T-T1
|
NEC | 功能相似 | SOT-323-6 |
Trans RF BJT NPN 12V 0.1A 6Pin SOT-363 T/R
|
||
UPA810T-T1
|
Renesas Electronics | 功能相似 | SOT |
Trans RF BJT NPN 12V 0.1A 6Pin SOT-363 T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review